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  solid state devices, inc. 14701 firestone blvd * la mirada, ca 90638 phone: (562) 404-4474 * fax: (562) 404-1773 ssdi@ssdi-power.com * www.ssdi-power.com designer?s data sheet part number/ordering information 1 / SSR1008J ssr1009j ssr1010j __ __ __ __ __ __ screening 2 / __ = not screened tx = tx level txv = txv s = s level lead options __ = straight leads, db = bent down, ub = bent up to-257 SSR1008J ssr1009j ssr1010j 10 amp 80 100 volts schottky rectifier features: ? extremely low forward voltage drop ? low reverse leakage ? hermetically sealed isolated power package ? guard ring for overvoltage protection ? eutectic die attach ? 175 c operating junction temperature ? tx, txv, or space level screening available maximum ratings rating symbol value unit peak repetitive reverse voltage and dc blocking voltage SSR1008J ssr1009j ssr1010j v rrm v rwm v r 80 90 100 volts average rectified output current 3 / (resistive load, 60hz, sine wave, ta=25 c) i o 10 amps peak surge current 3 / (8.3 ms pulse, half sine wave superimposed on i o , allow junction to reach equilibrium between pulses, ta=25 c) i fsm 200 amps operating and storage temperature t op & t stg -65 to +175 c maximum thermal resistance 3 / junction to case r jc 1.7 c/w notes: 1 / for ordering information, price, and availability- contact factory. 2 / screened to mil-prf-19500. 3 / for optimal performance, leads 2 & 3 should be connected.. note: all specifications are subject to change without notification. scd's for these devices should be re viewed by ssdi prior to release. data sheet #: rs0201b doc
bent down leads (db suffix) case outline- to-257 * pin out: pin 1- cathode pin 2- anode pin 3- anode up leads (ub suffix) solid state devices, inc. 14701 firestone blvd * la mirada, ca 90638 phone: (562) 404-4474 * fax: (562) 404-1773 ssdi@ssdi-power.com * www.ssdi-power.com SSR1008J ssr1009j ssr1010j electrical characteristics characteristics symbol maximum unit instantaneous forward voltage drop (i f = 1 adc, t a = 25 c, pulse) (i f = 5 adc, t a = 25 c, pulse) (i f = 10 adc, t a = 25 c, pulse) v f1 v f2 v f3 0.56 0.73 0.85 vdc instantaneous forward voltage drop (i f = 5 adc, t a = -55 c, pulse) v f4 0.8 vdc reverse leakage current (rated v r , t a = 25 c, pulse) i r1 100 a reverse leakage current (rated v r , t a = 100 c, pulse) i r2 5 ma junction capacitance (v r = 10 vdc, t a = 25 c, f = 1 mhz) c j 400 pf


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